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Fivefold Increase In Emission Efficiency of Gan Micro LEDs At Low Current Density
March 22, 2020
The emission efficiency of micro LEDs drops rapidly as the LED size decreases, especially in the low current density region (< 20 A/cm2), making it a challenge to achieve high-efficiency, high-brightness, high-resolution displays and the poor performance of red and green have pushed panel makers to develop hybrid solutions incorporating blue micro LEDs with red and green QD color converters. Advanced Industrial Science and Technology (AIST) researchers in collaboration with Tohoku University have developed technology for increasing the efficiency of GaN (gallium nitride) micro LEDs.
Figure 1: Current Density Charts
Fivefold Increase In Emission Efficiency of Gan Micro LEDs At Low Current Density
March 22, 2020
The emission efficiency of micro LEDs drops rapidly as the LED size decreases, especially in the low current density region (< 20 A/cm2), making it a challenge to achieve high-efficiency, high-brightness, high-resolution displays and the poor performance of red and green have pushed panel makers to develop hybrid solutions incorporating blue micro LEDs with red and green QD color converters. Advanced Industrial Science and Technology (AIST) researchers in collaboration with Tohoku University have developed technology for increasing the efficiency of GaN (gallium nitride) micro LEDs.
Figure 1: Current Density Charts
Source: Advanced Industrial Science and Technology
Conventional fabrication methods result in large processing damage on the LED side surfaces, so that the emission efficiency drops significantly when the LED size is reduced. The researchers fabricated GaN micro LEDs using neutral-beam etching technology that is known to have extremely low processing damage, and realized GaN micro LEDs with almost no drop in emission efficiency even when the LED size is reduced to 6 μm. Source: Advanced Industrial Science and Technology